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Scientists from the University of Ottawa and MIT review more than 20 years of research and identify pathways to room-temperature devices that could make electronics faster and more energy efficient.

Researchers develop a thin layer that combines two magnetic forces, slashing power needs for memory in AI and devices by ten times while boosting reliability.

Researchers at MIT have invented a transistor using magnetic materials instead of silicon, promising smaller, faster, and more energy-efficient electronic circuits.

This breakthrough in two-dimensional layers could lead to better data storage technologies and new insights into how magnets work at tiny scales.